Summary of MOS Transistor Basics-III

00:00:00 - 00:30:00

In this video, the basics of MOS transistors are discussed. The engineer explains how transistor size is shrinking due to Moore's law, and how this leads to second-order effects like velocity saturation. He also discusses how to calculate the pinch-off point for a MOS transistor, and how channel length affects saturation.

• 00:00:00 In this video, the basics of the MOS transistor are discussed, including the structural and electrical characteristics of the device, the meaning of substitute slope, and the various short channel effects that can occur in a MOSFET. Finally, the Mo's law of transistor growth is explained, and how it affects scaling in the digital VLSI design industry.
• 00:05:00 This video discusses the basics of MOS transistors, including the depletion region and channel. When the source-drain voltage is increased, the depletion region becomes larger, which allows for a higher threshold voltage.
• 00:10:00 Channel length scaling theory tells us that in order to maintain a constant electric field, the channel length must be reduced. This is known as a constant voltage field scaling theory.
• 00:15:00 This video discusses the basics of the transistor, including the constant voltage scaling and velocity saturation concepts.
• 00:20:00 In this video, the basics of transistors are discussed. The drain current, saturation velocity, and second-order effects are all explained.
• 00:25:00 This video discusses the basics of the MOS transistor. The gate voltage is important to switch on the device, and the saturation voltage is lower in short channels compared to long channels. The short channel effect has an important phenomena that there will always be a problem of punch through with this. The model for manual analysis is what we will be referring to when calculating current in a mosfet. Taking process dependent parameters into account allows for easy fabrication of MOSFETs.
• 00:30:00 In this YouTube video, an electrical engineer explains the basics of MOS transistors. He notes that, due to Moore's law, transistor size is shrinking, which leads to second-order effects like velocity saturation. He also discusses how to calculate the pinch-off point for a MOS transistor, and how channel length affects saturation.