Summary of Nano-scale images made with electrons

00:00:00 - 00:20:00

This video demonstrates how to create nano-scale images by bombarding a resist with electrons. The resist is a material that is used to create patterns on a substrate. The video shows how to create the images using an insulating substrate, a resist, and a spin coater. The resist is then dropped onto the wafer and spun at a high speed to create a thin surface layer. The images are then developed with cold isopropyl alcohol and washed away with deionized water.

• 00:00:00 Electron Beam lithography is a technique that is used to create small patterns on a resist. The difference between this technique and other lithography methods is that electrons have a much smaller wavelength, meaning that the resolution is much higher. The downside to this technique is that it is a direct write process, meaning that the patterns that are created are very similar to the original image that was scanned.
• 00:05:00 This video demonstrates how to create nano-scale images using electrons. The video starts by discussing the two main properties of the silicon wafer used in the demonstration - its flatness and its conductivity. It then shows how to create the images using an insulating substrate, a resist, and a spin coater. The resist is then dropped onto the wafer and spun at a high speed to create a thin surface layer. The images are then developed with cold isopropyl alcohol and washed away with deionized water.
• 00:10:00 The video demonstrates how optical microscope images can be used to study the thickness and line width of a pattern's features. The video also demonstrates how to adjust the dose of electrons to different regions of a resist to control the level of etching.
• 00:15:00 This video demonstrates how to make nano-scale images with electrons. The process is hacky, but it can be done with a simple scanning electron microscope. The resolution is limited, but it can be improved by reducing the emission current and spot size.
• 00:20:00 This YouTube video shows how to make nano-scale images by electron beam exposure. The electron beam can be turned off quickly, which allows for pixel-to-pixel tracing. This is important because the electron beam is a slow process. PMMA (polymethylmethacrylate) can turn from a positive resist to a negative resist, which can cause problems when using the pattern for something else. However, in practice the proximity effect lessens the impact of this issue.